High-performance GaAs metal-insulator-semiconductor field-effect transistors enabled by self-assembled nanodielectrics
نویسندگان
چکیده
High-performance GaAs metal-insulator-semiconductor field-effect-transistors MISFETs fabricated with very thin self-assembled organic nanodielectrics (SANDs), deposited from solution at room temperature, are demonstrated. A submicron gate-length depletion-mode n-channel GaAs MISFET with SAND thicknesses ranging from 5.5 to 16.5 nm exhibit a gate leakage current density 10−5 A/cm2 at a gate bias smaller than 3 V, a maximum drain current of 370 mA/mm at a forward gate bias of 2 V, and a maximum intrinsic transconductance of 170 mS/mm. The importance of appropriate GaAs surface chemistry treatments on SAND/GaAs interface properties is also presented. Application of SANDs to III-V compound semiconductors affords more opportunities to manipulate the complex III-V surface chemistry with broad materials options. © 2006 American Institute of Physics. DOI: 10.1063/1.2358202
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